POWER BIPOLAR TRANSISTOR, PNP | Renesas Electronics Corporation

Bipolar (BJT) Transistor PNP - Darlington 120 V 10 A 80 W Through Hole TO-3P

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Unit Price ($ / pc.)
1.665 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
1.58175 $
500 pcs.
1.4985 $
1000 pcs.
1.41525 $
3000 pcs.
1.332 $
10000 pcs.
1.24875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The 2SB1032K-E is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-3P-3, SC-65-3 package by Renesas Electronics Corporation made. The 2SB1032K-E is using SPQ 91 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)10μA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Power - Max80 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 91 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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