POWER BIPOLAR TRANSISTOR NPN | Renesas Electronics Corporation

Bipolar (BJT) Transistor NPN 50 V 4 A 7MHz 40 W Through Hole TO-220AB

default L
Images may differ 
Unit Price ($ / pc.)
0.58 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.551 $
500 pcs.
0.522 $
1000 pcs.
0.493 $
3000 pcs.
0.464 $
10000 pcs.
0.435 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The 2SD1133C-E is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by Renesas Electronics Corporation made. The 2SD1133C-E is using SPQ 258 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 4V
Power - Max40 W
Frequency - Transition7MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 258 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
2SD1062R