BIP NPN 5A 20V | onsemi

Bipolar (BJT) Transistor NPN 20 V 5 A 120MHz 900 mW Through Hole 3-MP

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Unit Price ($ / pc.)
0.105 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.09975 $
500 pcs.
0.0945 $
1000 pcs.
0.08925 $
3000 pcs.
0.084 $
10000 pcs.
0.07875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The 2SD1145G-AE is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 Long Body package by onsemi made. The 2SD1145G-AE is using SPQ 1401 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)20 V
Vce Saturation (Max) @ Ib, Ic500mV @ 60mA, 3A
Current - Collector Cutoff (Max)1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 500mA, 2V
Power - Max900 mW
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device Package3-MP
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1401 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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