POWER BIPOLAR TRANSISTOR, PNP | Renesas Electronics Corporation
Bipolar (BJT) Transistor PNP 100 V 4 A 1.8 W Through Hole TO-220AB
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Unit Price ($ / pc.)
0.525 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The 2SB860-E is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by Renesas Electronics Corporation made. The 2SB860-E is using SPQ 285 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Renesas Electronics Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 4V |
| Power - Max | 1.8 W |
| Frequency - Transition | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 285 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |