TRANS NPN 160V 0.3A TO92-3 | NXP USA Inc.
Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3
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Available: 173 pcs.
Next delivery: 2583 pcs.
Manufacturer Leadtime: **
Description
The 2N5551,412 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) Formed Leads package by NXP USA Inc. made. The 2N5551,412 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Tube |
Product Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 300 mA |
Voltage - Collector Emitter Breakdown (Max) | 160 V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 630 mW |
Frequency - Transition | 300MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
Base Product Number | 2N55 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |