NPN EPITAXIAL PLANAR SILICON | Sanyo

Bipolar (BJT) Transistor NPN 20 V 500 mA 2GHz 1.2 W Through Hole TO-126

default L
Images may differ 
Unit Price ($ / pc.)
0.33 $ *
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.3135 $
500 pcs.
0.297 $
1000 pcs.
0.2805 $
3000 pcs.
0.264 $
10000 pcs.
0.2475 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The 2SC3595D is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-225AA, TO-126-3 package by Sanyo made. The 2SC3595D is using SPQ 452 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrSanyo
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)20 V
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 5V
Power - Max1.2 W
Frequency - Transition2GHz
Operating Temperature150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 452 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
SPS9001