NOW WEEN - PHE13003C - POWER BIP | NXP USA Inc.

Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3

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Unit Price ($ / pc.)
0.04 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.038 $
500 pcs.
0.036 $
1000 pcs.
0.034 $
3000 pcs.
0.032 $
10000 pcs.
0.03 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The PHE13003C,126 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) Formed Leads package by NXP USA Inc. made. The PHE13003C,126 is using SPQ 3963 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max)100μA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 1A, 2V
Power - Max2.1 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3963 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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