NOW WEEN - PHE13003C - POWER BIP | NXP USA Inc.
Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3
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Unit Price ($ / pc.)
0.04 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Manufacturer Leadtime: **
Description
The PHE13003C,126 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) Formed Leads package by NXP USA Inc. made. The PHE13003C,126 is using SPQ 3963 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1.5 A |
Voltage - Collector Emitter Breakdown (Max) | 400 V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 1.5A |
Current - Collector Cutoff (Max) | 100μA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A, 2V |
Power - Max | 2.1 W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3963 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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