NOW WEEN - PHE13009 - POWER BIPO | NXP USA Inc.
Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
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Unit Price ($ / pc.)
0.165 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Manufacturer Leadtime: **
Description
The PHE13009/DG,127 is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 package by NXP USA Inc. made. The PHE13009/DG,127 is using SPQ 912 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 100μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Power - Max | 80 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 912 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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