TRANS PNP 180V 2A TO220NIS | Toshiba Semiconductor and Storage

Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS

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Unit Price ($ / pc.)
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Available: 248 pcs.
Next delivery: 4158 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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Description

The 2SA1930(Q,M) is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 Full Pack package by Toshiba Semiconductor and Storage made. The 2SA1930(Q,M) is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageBulk
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)180 V
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)5μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Power - Max2 W
Frequency - Transition200MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS
Base Product Number2SA1930
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes