TRANS NPN 100V 5A TO220NIS | Toshiba Semiconductor and Storage

Bipolar (BJT) Transistor NPN 100 V 5 A 12MHz 30 W Through Hole TO-220NIS

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Unit Price ($ / pc.)
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Available: 248 pcs.
Next delivery: 4158 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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Description

The 2SD1407A-Y(F) is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-220-3 Full Pack package by Toshiba Semiconductor and Storage made. The 2SD1407A-Y(F) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2V @ 400mA, 4A
Current - Collector Cutoff (Max)100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 5V
Power - Max30 W
Frequency - Transition12MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS
Base Product Number2SD1407
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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2SC5439(F)