TRANS NPN 160V 0.6A TO92-3 | Central Semiconductor Corp
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92-3
Images may differ
Unit Price ($ / pc.)
0.190115 $
*
Available: 530 pcs.
Next delivery: 10080 pcs.
Manufacturer Leadtime: 30 Weeks **
Description
The 2N5551 TIN/LEAD is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) package by Central Semiconductor Corp made. The 2N5551 TIN/LEAD is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Central Semiconductor Corp |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600 mA |
Voltage - Collector Emitter Breakdown (Max) | 160 V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 625 mW |
Frequency - Transition | 300MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
2N5551 TIN/LEAD ECAD module
2N5551 TIN/LEAD datesheet
2N5551 TIN/LEAD specification
2N5551 TIN/LEAD certificate
2N5551 TIN/LEAD component
2N5551 TIN/LEAD substitute
2N5551 TIN/LEAD packaging