TRANS NPN 100V 5A TP | onsemi
Bipolar (BJT) Transistor NPN 100 V 5 A 400MHz 800 mW Through Hole TP
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Available: 534 pcs.
Next delivery: 10164 pcs.
Manufacturer Leadtime: **
Description
The 2SC5706-P-E is a common industry Single Bipolar Transistors housed in a RoHS compliant TO-251-3 Short Leads, IPak, TO-251AA package by onsemi made. The 2SC5706-P-E is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | onsemi |
| Series | - |
| Package | Bag |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1μA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 400MHz |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | TP |
| Base Product Number | 2SC5706 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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2SC5706-P-E specification