SMALL SIGNAL BIPOLAR TRANSISTOR | NXP USA Inc.
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6
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Available: 171 pcs.
Next delivery: 2541 pcs.
Manufacturer Leadtime: **
Description
The BC847QAPN147 is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 6-XFDFN Exposed Pad package by NXP USA Inc. made. The BC847QAPN147 is using SPQ 9812 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 500μA, 10mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
Power - Max | 350mW |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Grade | Automotive |
Qualification | AEC-Q101 |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 9812 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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BC847QAPN147 specification