SMALL SIGNAL BIPOLAR TRANSISTOR | NXP USA Inc.

Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 125MHz 370mW Surface Mount DFN2020D-6

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Unit Price ($ / pc.)
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Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The PBSS4160PANPS115 is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 6-UDFN Exposed Pad package by NXP USA Inc. made. The PBSS4160PANPS115 is using SPQ 2112 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
Series-
PackageBulk
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic220mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce290 @ 100mA, 2V
Power - Max370mW
Frequency - Transition175MHz, 125MHz
Operating Temperature150°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageDFN2020D-6
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 2112 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes