TRANS NPN/PNP 50V 0.15A US6 | Toshiba Semiconductor and Storage
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz 200mW Surface Mount US6
Images may differ
Available: 501 pcs.
Next delivery: 9471 pcs.
Manufacturer Leadtime: **
Description
The HN1B01FU-Y(L,F,T) is a common industry Bipolar Transistor Arrays housed in a RoHS compliant 6-TSSOP, SC-88, SOT-363 package by Toshiba Semiconductor and Storage made. The HN1B01FU-Y(L,F,T) is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
Power - Max | 200mW |
Frequency - Transition | 120MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Base Product Number | HN1B01 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
HN1B01FU-Y(L,F,T) ECAD module
HN1B01FU-Y(L,F,T) datesheet
HN1B01FU-Y(L,F,T) specification
HN1B01FU-Y(L,F,T) certificate
HN1B01FU-Y(L,F,T) supplier
HN1B01FU-Y(L,F,T) component
HN1B01FU-Y(L,F,T) substitute
HN1B01FU-Y(L,F,T) packaging
HN1B01FU-Y(L,F,T) sources