MOSFET N-CH 30V 49.1/178.3A PPAK | Vishay Siliconix
N-Channel 30 V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK 1212-8S
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Unit Price ($ / pc.)
0.272395 $
*
Available: 152 pcs.
Next delivery: 2142 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 14 Weeks **
Quantity
Price per unit*
100 pcs.
0.258775 $
500 pcs.
0.245156 $
1000 pcs.
0.231536 $
3000 pcs.
0.217916 $
10000 pcs.
0.204296 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SISS66DN-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK 1212-8S package by Vishay Siliconix made. The SISS66DN-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 49.1A (Ta), 178.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.38mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3327 pF @ 15 V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK 1212-8S |
| Package / Case | PowerPAK 1212-8S |
| Base Product Number | SISS66 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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