MOSFET P-CH 20V 2A 6UDFN | Toshiba Semiconductor and Storage
P-Channel 20 V 2A (Ta) 1W (Ta) Surface Mount 6-μDFN (2x2)
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Unit Price ($ / pc.)
0.038075 $
*
Available: 152 pcs.
Next delivery: 2142 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 16 Weeks **
Quantity
Price per unit*
100 pcs.
0.036171 $
500 pcs.
0.034268 $
1000 pcs.
0.032364 $
3000 pcs.
0.03046 $
10000 pcs.
0.028556 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SSM6G18NU,LF is a common industry Single FETs, MOSFETs housed in a RoHS compliant 6-WDFN Exposed Pad package by Toshiba Semiconductor and Storage made. The SSM6G18NU,LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-μDFN (2x2) |
| Package / Case | 6-WDFN Exposed Pad |
| Base Product Number | SSM6G18 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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