MOSFET N-CH 600V 29A TO220AB | Vishay Siliconix

N-Channel 600 V 29A (Tc) 208W (Tc) Through Hole TO-220AB

default L
Images may differ 
Unit Price ($ / pc.)
1.33596 $ *
Available: 152 pcs.
Next delivery: 2142 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
1.269162 $
500 pcs.
1.202364 $
1000 pcs.
1.135566 $
3000 pcs.
1.068768 $
10000 pcs.
1.00197 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The SIHP105N60EF-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The SIHP105N60EF-GE3 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
SeriesEF
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs102mOhm @ 13A, 10V
Vgs(th) (Max) @ Id5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1804 pF @ 100 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberSIHP105
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes