GANFET N-CH 650V 34.5A TO247-3 | Nexperia USA Inc.
N-Channel 650 V 34.5A (Ta) 143W (Ta) Through Hole TO-247-3
Images may differ 
Unit Price ($ / pc.)
6.76962 $
*
Available: 154 pcs.
Next delivery: 2184 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 27 Weeks **
Quantity
Price per unit*
100 pcs.
6.431139 $
500 pcs.
6.092658 $
1000 pcs.
5.754177 $
3000 pcs.
5.415696 $
10000 pcs.
5.077215 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The GAN063-650WSAQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Nexperia USA Inc. made. The GAN063-650WSAQ is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Nexperia USA Inc. |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | GAN063 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 30 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search