MOSFET N-CH 600V 3A SOT223 | Infineon Technologies
N-Channel 600 V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223-3-1
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Unit Price ($ / pc.)
0.101065 $
*
Available: 164 pcs.
Next delivery: 2394 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.096012 $
500 pcs.
0.090959 $
1000 pcs.
0.085905 $
3000 pcs.
0.080852 $
10000 pcs.
0.075799 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPN60R2K0PFD7SATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-261-3 package by Infineon Technologies made. The IPN60R2K0PFD7SATMA1 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOSPFD7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 30μA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-3-1 |
| Package / Case | TO-261-3 |
| Base Product Number | IPN60R2 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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