MOSFET N-CH 60V 120A I2PAK | NXP USA Inc.
N-Channel 60 V 120A (Tc) 349W (Tc) Through Hole I2PAK
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Unit Price ($ / pc.)
0.65 $
*
Available: 165 pcs.
Next delivery: 2415 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.6175 $
500 pcs.
0.585 $
1000 pcs.
0.5525 $
3000 pcs.
0.52 $
10000 pcs.
0.4875 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The BUK9E2R8-60E,127 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by NXP USA Inc. made. The BUK9E2R8-60E,127 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | NXP USA Inc. |
| Series | TrenchMOS |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 17450 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Base Product Number | BUK9 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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