MOSFET N-CH 100V 190MA TO92-3 | NXP USA Inc.

N-Channel 100 V 190mA (Ta) 830mW (Ta) Through Hole TO-92-3

default L
Images may differ 
Unit Price ($ / pc.)
$ *
Available: 165 pcs.
Next delivery: 2415 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BST72A,112 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) Formed Leads package by NXP USA Inc. made. The BST72A,112 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
SeriesTrenchMOS
PackageBulk
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id3.5V @ 1mA
Vgs (Max)20V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
FET Feature-
Power Dissipation (Max)830mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product NumberBST7
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
BSS192,115