POWER FIELD-EFFECT TRANSISTOR | Renesas Electronics Corporation
N-Channel 250 V 3A (Ta) 20W (Ta) Through Hole TO-220FN
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Unit Price ($ / pc.)
0.525 $
*
Available: 170 pcs.
Next delivery: 2520 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.49875 $
500 pcs.
0.4725 $
1000 pcs.
0.44625 $
3000 pcs.
0.42 $
10000 pcs.
0.39375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The H5N2521FN-E#T2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Renesas Electronics Corporation made. The H5N2521FN-E#T2 is using SPQ 285 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Renesas Electronics Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Ta) |
| Operating Temperature | 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FN |
| Package / Case | TO-220-3 Full Pack |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 285 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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