N-CHANNEL POWER MOSFET | Infineon Technologies

N-Channel 200 V 14.5A (Tc) 95W (Tc) Through Hole PG-TO262-3-1

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Unit Price ($ / pc.)
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Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The BUZ31H3046 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Infineon Technologies made. The BUZ31H3046 is using SPQ 495 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesSIPMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id4V @ 1mA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1120 pF @ 25 V
FET Feature-
Power Dissipation (Max)95W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 495 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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