N-CHANNEL POWER MOSFET | Fairchild Semiconductor

N-Channel 200 V 4.1A (Tc) 26W (Tc) Through Hole TO-220F

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Unit Price ($ / pc.)
0.1 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.095 $
500 pcs.
0.09 $
1000 pcs.
0.085 $
3000 pcs.
0.08 $
10000 pcs.
0.075 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRLS620A is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Fairchild Semiconductor made. The IRLS620A is using SPQ 1494 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrFairchild Semiconductor
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs800mOhm @ 2.05A, 5V
Vgs(th) (Max) @ Id2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
FET Feature-
Power Dissipation (Max)26W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1494 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes