N-CHANNEL POWER MOSFET | Infineon Technologies

N-Channel 30 V 39A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M

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Unit Price ($ / pc.)
0.54 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.513 $
500 pcs.
0.486 $
1000 pcs.
0.459 $
3000 pcs.
0.432 $
10000 pcs.
0.405 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSB012N03LX3G is a common industry Single FETs, MOSFETs housed in a RoHS compliant 3-WDSON package by Infineon Technologies made. The BSB012N03LX3G is using SPQ 277 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesOptiMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs169 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16900 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M
Package / Case3-WDSON
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 277 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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HUF75945G3