N-CHANNEL POWER MOSFET | Infineon Technologies
N-Channel 80 V 45A (Tc) 79W (Tc) Surface Mount PG-TO263-3
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Unit Price ($ / pc.)
0.245 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.23275 $
500 pcs.
0.2205 $
1000 pcs.
0.20825 $
3000 pcs.
0.196 $
10000 pcs.
0.18375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPB136N08N3GATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Infineon Technologies made. The IPB136N08N3GATMA1 is using SPQ 611 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | OptiMOS3 |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 33μA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 611 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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