N-CHANNEL POWER MOSFET | NXP USA Inc.

N-Channel 25 V 61A (Ta) 43W (Ta) Surface Mount LFPAK56, Power-SO8

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Unit Price ($ / pc.)
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Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
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Description

The PSMN6R0-25YLD115 is a common industry Single FETs, MOSFETs housed in a RoHS compliant SC-100, SOT-669 package by NXP USA Inc. made. The PSMN6R0-25YLD115 is using SPQ 1429 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrNXP USA Inc.
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C61A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 12 V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)43W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1429 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes