SICFET N-CH 1700V 7.4A TO263-7 | Infineon Technologies
N-Channel 1700 V 7.4A (Tc) 88W (Tc) Surface Mount PG-TO263-7-13
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Unit Price ($ / pc.)
1.598075 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 28 Weeks **
Quantity
Price per unit*
100 pcs.
1.518171 $
500 pcs.
1.438268 $
1000 pcs.
1.358364 $
3000 pcs.
1.27846 $
10000 pcs.
1.198556 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IMBF170R650M1XTMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-8, D2PAK (7 Leads + Tab), TO-263CA package by Infineon Technologies made. The IMBF170R650M1XTMA1 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolSiC |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.5A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.7mA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 12 V |
| Vgs (Max) | +20V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-13 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number | IMBF170 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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