SICFET N-CH 1200V 180A MODULE | Rohm Semiconductor

N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module

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Unit Price ($ / pc.)
254.422915 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 17 Weeks **
Quantity
Price per unit*
100 pcs.
241.701769 $
500 pcs.
228.980624 $
1000 pcs.
216.259478 $
3000 pcs.
203.538332 $
10000 pcs.
190.817186 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSM180C12P3C202 is a common industry Single FETs, MOSFETs housed in a RoHS compliant Module package by Rohm Semiconductor made. The BSM180C12P3C202 is using SPQ 12 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRohm Semiconductor
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 50mA
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 10 V
FET Feature-
Power Dissipation (Max)880W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageModule
Package / CaseModule
Base Product NumberBSM180
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 12 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes