MOSFET N-CH 100V 160A TO220SM | Toshiba Semiconductor and Storage
N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
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Unit Price ($ / pc.)
0.875 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 32 Weeks **
Quantity
Price per unit*
100 pcs.
0.83125 $
500 pcs.
0.7875 $
1000 pcs.
0.74375 $
3000 pcs.
0.7 $
10000 pcs.
0.65625 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The XK1R9F10QB,LXGQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Toshiba Semiconductor and Storage made. The XK1R9F10QB,LXGQ is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSX-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.92mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 184 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11500 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-220SM(W) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | XK1R9F10 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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