SICFET N-CH 1200V 17.3A TO247 | onsemi
N-Channel 1200 V 17.3A (Tc) 111W (Tc) Through Hole TO-247-4L
Images may differ 
Unit Price ($ / pc.)
7.160155 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 6 Weeks **
Quantity
Price per unit*
100 pcs.
6.802147 $
500 pcs.
6.44414 $
1000 pcs.
6.086132 $
3000 pcs.
5.728124 $
10000 pcs.
5.370116 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The NVH4L160N120SC1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-4 package by onsemi made. The NVH4L160N120SC1 is using SPQ 34 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | onsemi |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Base Product Number | NVH4L160 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 34 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search