SICFET N-CH 650V 45A TO247 | STMicroelectronics

N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads

default L
Images may differ 
Unit Price ($ / pc.)
$ *
Available: 173 pcs.
Next delivery: 2583 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The SCTWA35N65G2VAG is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by STMicroelectronics made. The SCTWA35N65G2VAG is using SPQ 600 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3
Base Product NumberSCTWA35
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 600 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
STB33N60M6
Next
STD13N60M6