MOSFET N-CH 20V 58.3A/210A PPAK | Vishay Siliconix
N-Channel 20 V 58.3A (Ta), 210A (Tc) 5W (Ta), 65W (Tc) Surface Mount PowerPAK 1212-8S
Images may differ 
Unit Price ($ / pc.)
0.33625 $
*
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 14 Weeks **
Quantity
Price per unit*
100 pcs.
0.319438 $
500 pcs.
0.302625 $
1000 pcs.
0.285813 $
3000 pcs.
0.269 $
10000 pcs.
0.252188 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SISS80DN-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK 1212-8S package by Vishay Siliconix made. The SISS80DN-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 58.3A (Ta), 210A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.92mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Vgs (Max) | +12V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 65W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK 1212-8S |
| Package / Case | PowerPAK 1212-8S |
| Base Product Number | SISS80 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search