POWER FIELD-EFFECT TRANSISTOR | Renesas Electronics Corporation

N-Channel 30 V 30A (Ta) 20W (Tc) Surface Mount 8-HWSON (3.3x3.3)

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Unit Price ($ / pc.)
0.47 $ *
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.4465 $
500 pcs.
0.423 $
1000 pcs.
0.3995 $
3000 pcs.
0.376 $
10000 pcs.
0.3525 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RJK03E0DNS-00#J5 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerWDFN package by Renesas Electronics Corporation made. The RJK03E0DNS-00#J5 is using SPQ 319 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRenesas Electronics Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Rds On (Max) @ Id, Vgs5.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs15.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3050 pF @ 10 V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 319 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes