PFET, 13A I(D), 100V, 0.08OHM, 1 | Infineon Technologies
N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3-123
Images may differ 
Unit Price ($ / pc.)
0.23 $
*
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.2185 $
500 pcs.
0.207 $
1000 pcs.
0.1955 $
3000 pcs.
0.184 $
10000 pcs.
0.1725 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPP80CN10NGXKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IPP80CN10NGXKSA1 is using SPQ 649 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | OptiMOS 2 |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 12μA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 716 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-123 |
| Package / Case | TO-220-3 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 649 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search