POWER FIELD-EFFECT TRANSISTOR, 1 | NXP USA Inc.
N-Channel 100 V 100A (Tj) 263W (Tc) Through Hole I2PAK
Images may differ 
Unit Price ($ / pc.)
0.31 $
*
Available: 176 pcs.
Next delivery: 2646 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.2945 $
500 pcs.
0.279 $
1000 pcs.
0.2635 $
3000 pcs.
0.248 $
10000 pcs.
0.2325 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The PSMN8R5-100ESQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by NXP USA Inc. made. The PSMN8R5-100ESQ is using SPQ 486 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5512 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 486 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search