MOSFET N-CH 200V 18A TO263AB | Harris Corporation

N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB

default L
Images may differ 
Unit Price ($ / pc.)
1.37 $ *
Available: 176 pcs.
Next delivery: 2646 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
1.3015 $
500 pcs.
1.233 $
1000 pcs.
1.1645 $
3000 pcs.
1.096 $
10000 pcs.
1.0275 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The RF1S640SM is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Harris Corporation made. The RF1S640SM is using SPQ 110 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 25 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 110 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
IRF9622156
Next
RF1S9530