-0.6A, -80V, 1.6 OHM, P-CHANNEL | Harris Corporation

P-Channel 60 V 600mA (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

default L
Images may differ 
Unit Price ($ / pc.)
0.31 $ *
Available: 176 pcs.
Next delivery: 2646 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.2945 $
500 pcs.
0.279 $
1000 pcs.
0.2635 $
3000 pcs.
0.248 $
10000 pcs.
0.2325 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IRFD9113 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Harris Corporation made. The IRFD9113 is using SPQ 485 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrHarris Corporation
Series-
PackageBulk
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)
Base Product NumberIRFD9113
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 485 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
IRFD220