MOSFET N-CH 800V 8A TO252AA | Vishay Siliconix
N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-252AA
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Unit Price ($ / pc.)
0.3625 $
*
Available: 181 pcs.
Next delivery: 2751 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
0.344375 $
500 pcs.
0.32625 $
1000 pcs.
0.308125 $
3000 pcs.
0.29 $
10000 pcs.
0.271875 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIHD11N80AE-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-252-3, DPAK (2 Leads + Tab), SC-63 package by Vishay Siliconix made. The SIHD11N80AE-GE3 is using SPQ 75 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 804 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | SIHD11 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 75 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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