MOSFET N-CH 60V 45.6A/2.4A PPAK | Vishay Siliconix
N-Channel 60 V 45.6A (Ta), 2.4A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK SO-8DC
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Unit Price ($ / pc.)
0.63457 $
*
Available: 181 pcs.
Next delivery: 2751 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
0.602842 $
500 pcs.
0.571113 $
1000 pcs.
0.539385 $
3000 pcs.
0.507656 $
10000 pcs.
0.475928 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIDR626LDP-T1-RE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK SO-8 package by Vishay Siliconix made. The SIDR626LDP-T1-RE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 45.6A (Ta), 2.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK SO-8DC |
| Package / Case | PowerPAK SO-8 |
| Base Product Number | SIDR626 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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