SICFET N-CH 1200V 36A TO3P | Toshiba Semiconductor and Storage
N-Channel 1200 V 36A (Tc) 272W (Tc) Through Hole TO-3P(N)
Images may differ 
Unit Price ($ / pc.)
12.12 $
*
Available: 181 pcs.
Next delivery: 2751 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 15 Weeks **
Quantity
Price per unit*
100 pcs.
11.514 $
500 pcs.
10.908 $
1000 pcs.
10.302 $
3000 pcs.
9.696 $
10000 pcs.
9.09 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TW070J120B,S1Q is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The TW070J120B,S1Q is using SPQ 25 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Vgs (Max) | ±25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| FET Feature | Standard |
| Power Dissipation (Max) | 272W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | TW070J120 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 25 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search