MOSFET N-CH 650V 69A TO247-3 | Infineon Technologies

N-Channel 650 V 69A (Tc) 305W (Tc) Through Hole PG-TO247-3

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Unit Price ($ / pc.)
4.228375 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
4.016956 $
500 pcs.
3.805538 $
1000 pcs.
3.594119 $
3000 pcs.
3.3827 $
10000 pcs.
3.171281 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IPW65R029CFD7XKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Infineon Technologies made. The IPW65R029CFD7XKSA1 is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolMOS
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C69A (Tc)
Rds On (Max) @ Id, Vgs29mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7149 pF @ 400 V
FET Feature-
Power Dissipation (Max)305W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3
Base Product NumberIPW65R029
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 30 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes