40V N-CH FET SOURCE-DOWN CG 3X3 | Infineon Technologies
N-Channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount, Wettable Flank PG-TTFN-9-1
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Unit Price ($ / pc.)
0.58758 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Manufacturer Leadtime: 22 Weeks **
Description
The IQE013N04LM6CGATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Infineon Technologies made. The IQE013N04LM6CGATMA1 is using SPQ 5000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2V @ 51μA |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 20 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount, Wettable Flank |
Supplier Device Package | PG-TTFN-9-1 |
Package / Case | 8-PowerTDFN |
Base Product Number | IQE013 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 5000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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