POWER FIELD-EFFECT TRANSISTOR, 1 | Fairchild Semiconductor

N-Channel 600 V 13A (Tc) 116W (Tc) Through Hole TO-220-3

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Unit Price ($ / pc.)
1.295 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
1.23025 $
500 pcs.
1.1655 $
1000 pcs.
1.10075 $
3000 pcs.
1.036 $
10000 pcs.
0.97125 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The FCP13N60N is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Fairchild Semiconductor made. The FCP13N60N is using SPQ 116 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrFairchild Semiconductor
SeriesSupreMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs258mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs39.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1765 pF @ 100 V
FET Feature-
Power Dissipation (Max)116W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 116 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes