POWER FIELD-EFFECT TRANSISTOR, 2 | Fairchild Semiconductor

N-Channel 600 V 22A (Tc) 205W (Tc) Through Hole TO-3PN

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Unit Price ($ / pc.)
2.33 $ *
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
2.2135 $
500 pcs.
2.097 $
1000 pcs.
1.9805 $
3000 pcs.
1.864 $
10000 pcs.
1.7475 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The FCA22N60N is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Fairchild Semiconductor made. The FCA22N60N is using SPQ 65 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrFairchild Semiconductor
SeriesSupreMOS
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 100 V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 65 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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