POWER FIELD-EFFECT TRANSISTOR, N | Fairchild Semiconductor
N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 (Y-Forming)
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Unit Price ($ / pc.)
0.41 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.3895 $
500 pcs.
0.369 $
1000 pcs.
0.3485 $
3000 pcs.
0.328 $
10000 pcs.
0.3075 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The FQPF7N65CYDTU is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack, Formed Leads package by Fairchild Semiconductor made. The FQPF7N65CYDTU is using SPQ 366 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Fairchild Semiconductor |
| Series | QFET |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1245 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 366 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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