POWER FIELD-EFFECT TRANSISTOR, 1 | Fairchild Semiconductor
N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN
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Unit Price ($ / pc.)
0.815 $
*
Available: 184 pcs.
Next delivery: 2814 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.77425 $
500 pcs.
0.7335 $
1000 pcs.
0.69275 $
3000 pcs.
0.652 $
10000 pcs.
0.61125 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The FDA16N50-F109 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Fairchild Semiconductor made. The FDA16N50-F109 is using SPQ 184 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Fairchild Semiconductor |
| Series | UniFET |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1945 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 184 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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