SICFET N-CH 1200V 52A TO247-3 | Infineon Technologies
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
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Unit Price ($ / pc.)
7.283635 $
*
Available: 186 pcs.
Next delivery: 2856 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 39 Weeks **
Quantity
Price per unit*
100 pcs.
6.919453 $
500 pcs.
6.555272 $
1000 pcs.
6.19109 $
3000 pcs.
5.826908 $
10000 pcs.
5.462726 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The AIMW120R045M1XKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Infineon Technologies made. The AIMW120R045M1XKSA1 is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolSiC |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Vgs (Max) | +20V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 228W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | AIMW120 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 30 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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