MOSFET N-CH 100V 23A/225A PPAK | Vishay Siliconix
N-Channel 100 V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK 8 x 8
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Unit Price ($ / pc.)
1.07685 $
*
Available: 186 pcs.
Next delivery: 2856 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
1.023008 $
500 pcs.
0.969165 $
1000 pcs.
0.915323 $
3000 pcs.
0.86148 $
10000 pcs.
0.807638 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIJH112E-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Vishay Siliconix made. The SIJH112E-T1-GE3 is using SPQ 2000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 225A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8050 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 333W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK 8 x 8 |
| Package / Case | 8-PowerTDFN |
| Base Product Number | SIJH112 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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